| PART |
Description |
Maker |
| RJK60S5DPQ-E0 RJK60S5DPQ-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT6027HVR |
POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| AOK20S60L |
600V 20A a MOS
|
Alpha & Omega Semicondu...
|
| RJK6034DPP-E0T2 RJK6034DPP-E0-15 |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6015DPM-00T1 |
600V - 21A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| AOB20S60 AOT20S60 AOTF20S60 AOB20S60L |
600V 20A a MOS TM Power Transistor
600V 20A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| AOK20S60 |
600V 20A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| RJL6015DPK-15 |
600V - 19A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
