| PART |
Description |
Maker |
| DS3070W-100 DS3070W |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock
|
MAXIM[Maxim Integrated Products]
|
| KMM53616000CK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
| KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
| DS2030W-100 |
3.3V Single-Piece 256k Nonvolatile SRAM
|
Maxim Integrated Products
|
| DS2045L |
3.3V Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
| DS2030W |
3.3V Single-Piece 256k Nonvolatile SRAM
|
Maxim
|
| DS3030W DS3030W-100 |
3.3V Single-Piece 256kb Nonvolatile SRAM with Clock
|
http://
Dallas Semiconductor
|
| DS2065W |
3.3V Single-Piece 8Mb Nonvolatile SRAM
From old datasheet system
|
Maxim
|
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V1MV18D |
16Mb SYNCBURST?SRAM
16Mb SYNCBURST?/a> SRAM
16Mb SYNCBURSTSRAM
16Mb SYNCBURST?/a> SRAM
|
Micron Technology, Inc.
|
| MT55L512Y36P MT55L512Y32P MT55L1MY18P |
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| IS41C16100C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
