| PART |
Description |
Maker |
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| PTF080451E PTF080451 |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| PTF080101S PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W 860-960MHZ
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
|
INFINEON[Infineon Technologies AG]
|
| MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
| MAPLST2122-090CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
|
Tyco Electronics
|
| MAPLST0810-090CF MAPLST0810-090CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
|
MACOM[Tyco Electronics]
|
| MAPLST2122-060CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
|
Tyco Electronics
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| IFS75B12N3T4B31 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
| IFS75S12N3T4B11 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
| PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
