| PART |
Description |
Maker |
| IXFN340N07 IXFN340N0704 |
HiPerFET?/a> Power MOSFETs Single Die MOSFET
HiPerFET⑩ Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXTD8P50-5B IXTD16P20-5B IXTD36P10-5B |
500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
200 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
|
IXYS, Corp.
|
| MSAGA11F120D |
Fast IGBT Die for Implantable Cardio Defibrillator Applications
|
IGBT 晶体
|
| PSMG100-05 PSMG100_05 PSMG100/05 PSMG10005 |
Power MOSFET
Single MOSFET Die
|
Powersem GmbH
Meder Electronic
|
| IXFE23N100 |
(IXFE23N100 / IXFE24N100) Single MOSFET Die
|
IXYS Corporation
|
| IXFN34N100 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IRFC2907B IRFP2907 |
HEXFET? Power MOSFET Die in Wafer Form
HEXFET Power MOSFET Die in Wafer Form
|
IRF[International Rectifier]
IXYS Corporation
|
| IXFD8N80-5T |
800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET DIE-5
|
IXYS, Corp.
|
| IRFC1404 |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IRFP2907B IRFC2907B |
HEXFET Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IXFN280N0708 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
