| PART |
Description |
Maker |
| 2SK3783 |
N-channel Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
| D1209UK D1209 |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-400MHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-400MHz,推挽)
|
TT electronics Semelab, Ltd. TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
| TPC8403 |
Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) Motor Drive Notebook PC Portable Machines and Tools
|
TOSHIBA
|
| 3SK300 |
Silicon N Channel MOS FET Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SJ548 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 2SK1575 |
Silicon N-Channel MOS FET From old datasheet system Silicon NPN Triple Diffused
|
Hitachi Semiconductor
|
| SSM5G09TU-14 |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| CTLM8110-M832D |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|