| PART |
Description |
Maker |
| FDB883210 FDB8832-F085 FDB8832F085 |
30V N-Channel Logic Level PowerTrenchMOSFET
N-Channel Logic Level PowerTrench? MOSFET 30V, 80A, 2.1mΩ
|
Fairchild Semiconductor
|
| SUD15N06 SUD15N06-90L |
N-Channel 60-V (D-S), 175C MOSFET; Logic Level; N通道60VD-S75MOSFET，逻辑电平
N-Channel 60-V (D-S), 175C MOSFET;
Logic Level;
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
N-Channel 60-V (D-S) 175C MOSFET, Logic Level
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| ISL9N308AP3 ISL9N308AS3ST |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mOhm
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m ?
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 8M з
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m з 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| SUD23N06-31L |
TERMINAL IGBT模块
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
N-Channel 60-V (D-S) 175C MOSFET, Logic Level
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL HGT1S |
DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL
DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| PHU108NQ03LT PHU108NQ03LT127 PHB108NQ03LT PHD108NQ |
N-channel TrenchMOS logic level FET
75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, IPAK-3
N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
| NTP22N06L NTB22N06L NTP22N06L-D |
Power MOSFET 22 Amps, 60 Volts, Logic Level N-Channel TO-220 and D 2 PAK
Power MOSFET 22Amps, 60 Volts,Logic Level N-Channel TO-220(22A, 60 V,逻辑电平，N通道，TO-220封装的功率MOSFET) 22 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
| NTP27N06L-D NTB27N06L NTP27N06L |
Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,逻辑电平，N通道，TO-220封装的功率MOSFET) 27 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 27 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK
|
ITT, Corp.
ON Semiconductor
|
| BUK9614-55A BUK9514-55A |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk
TrenchMOS logic level FET
TrenchMOS TM logic level FET
TrenchMOS(tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
|
