| PART |
Description |
Maker |
| P3257-50 |
Allowable current:40mA; MCT photoconductive detector: dewar type detector with high sensitivity and high-speed response in long wavelength range
|
Hamamatsu Corporation
|
| MTD5010N |
Peak Sensitivity Wavelength: 850nm
|
Marktech Corporate
|
| MTD8000N4T |
Peak Sensitivity Wavelength: 880nm
|
Marktech Corporate
|
| MTE6066M2-UR |
Peak Sensitivity Wavelength: 660nm
|
Marktech Corporate
|
| MTD5052N |
Peak Sensitivity Wavelength: 525nm
|
Marktech Corporate
|
| MTE5057WUYG MTE5057W-UYG |
Peak Sensitivity Wavelength: 574nm
|
Marktech Corporate
|
| S9251-10 S9251-15 S9251-02 S9251-05 S9251 |
Si APD High sensitivity in near IR range
|
Hamamatsu Corporation
|
| PMO-4015MN-42HXQ |
Sensitivity Range -42 ± 2 dB RL = 2.2 k Vcc = 2.0v (1 kHz 0 dB = 1 v/Pa)
|
Mallory performance clu...
|
| PMO-4015SN-42UQ |
Sensitivity Range -42 ± 3 dB RL = 2.2 k Vcc = 2.0v (1 kHz 0 dB = 1 v/Pa)
|
Mallory performance clu...
|
| FU-311SPP-CV3 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
