| PART |
Description |
Maker |
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
| 16TTS08S 16TTS08STRL 16TTS08STRR 16TTS16STRR 16TTS |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits 12000A条相控制可控硅的一D2 - PAK封装
800V 10A Phase Control SCR in a D2-Pak package
1600V 10A Phase Control SCR in a D2-Pak package
1200V 10A Phase Control SCR in a D2-Pak package
CAT5E 350MHZ PATCH CORD, 10 FT BEIGE
SURFACE MOUNTABLE PHASE CONTROL SCR 表面贴装相位控制可控
|
IDEC, Corp.
International Rectifier, Corp.
|
| STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STD11NM60N STF11NM60N STB11NM60N-1 STP11NM60N STD1 |
N-channel 600V - 0.37楼? - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| BR1000 BR1010 BR1001 BR1002 BR1004 BR1006 BR1008 |
SILICON BRIDGE RECTIFIERS 硅桥式整流器
MOSFET P-CH 500V 8A TO-247AD
MOSFET P-CH 600V 10A TO-247AD
MOSFET P-CH 500V 7A TO-247AD
MOSFET P-CH 500V 11A TO-247AD
MOSFET N-CH 600V 20A TO-247AD
|
EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IXTA4N60P IXTU4N60P IXTY4N60P |
MOSFET N-CH 600V 4A D2-PAK 4 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
IXYS, Corp.
IXYS Corporation
|
| TFF10N60 |
N-Channel Power MOSFET 10A, 600V, 0.75Ω
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| STH10NK60ZFI |
N-CHANNEL 600V 0.65 OHM 10A ZENER-PROTECTED SUPERMESH POWER MOSFET
|
SGS Thomson Microelectronics
|
| 10ETS08FP 10ETS12FP 10ETS16FP |
Input Rectifier Diode(输入整流二极 输入整流二极管（输入整流二极管）
1600V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package 1600V 10A条性病。恢复二极管采用TO - 220伏交流电源全白（2引脚）封
800V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package 800V0A条性病。恢复二极管采用TO - 220伏交流电源全白（2引脚）封
1200V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
|
International Rectifier, Corp.
STMicroelectronics N.V.
Jiangsu Changjiang Electronics Technology Co., Ltd.
|
