| PART |
Description |
Maker |
| ATS636LSE12 ATS636LSETN-T |
The ATS636LSE programmable, true power-on state (TPOS), device is optimized Hall-effect IC and rare-earth pellet combinations that switch in response to magnetic signals...
|
Allegro MicroSystems
|
| IRFSL5615PBF IRFS5615PBF IRFS5615PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| ISL9N302AP3 N302AP |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| SUP70N03-09P SUB70N03-09P |
N-Channel MOSFET
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
N-Channel 30-V (D-S) 175C MOSFET PWM Optimized
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| IXGA12N120A2 |
IGBT Optimized
|
IXYS Corporation
|
| IXYP20N65B3D1 |
Optimized for 5-30kHz Switching
|
IXYS Corporation
|
| SD0411121011 |
INFRARED-OPTIMIZED PHOTODIODE
|
Silicon Detector
|
| IRF7779L2PBF |
Optimized for Synchronous Rectification
|
International Rectifier
|
| ISL9N312AD3 ISL9N312AD3ST ISL9N312AD3STNL ISL9N312 |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
PS MEDICAL SWITCHING 12V 4.7A 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
POWER SUP SWITCHER 41W 24V MED 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| SMF-06020 |
Power Optimized GaAs FET
|
Samsung Electronics
|
| 1N34A |
Optimized for Radio Frequency Response
|
MICROSEMI[Microsemi Corporation]
|
