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ACE632 - The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ACE632_4748426.PDF Datasheet


Part No.	ACE632
Description	The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
File Size	947.24K / 11 Page
Maker	ACE Technology Co., LTD.
Homepage	http://www.ace-ele.com/
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Full text search : The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Product Description search : The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Related Part Number

PART	Description	Maker
CHA-20NF	(CHA-20xx) Coaxial Attenuators	Component General
ACE632	The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.	ACE Technology Co., LTD.
PR010002 PR010003 PP040001 PP050002 PP040002 PRO50	MAT PRFRNCE 1.5X0.9 CHA/GRY MAT PRFRNCE 1.8X1.2 CHR/GRY MAT POLYPLUSH 0.9X0.6 GRN 垫POLYPLUSH 0.9X0.6 GRN MAT POLYPLUSH 1.5X0.9 BRWN 垫POLYPLUSH 1.5X0.9 BRWN MAT POLYPLUSH 1.5X0.9 GRN 垫POLYPLUSH 1.5X0.9 GRN MAT PRFRNCE 1.5X0.9 BRWN 垫PRFRNCE 1.5X0.9 BRWN MAT PRFRNCE 1.5X0.9 BLUE 垫PRFRNCE 1.5X0.9	YEONHO Electronics Co., Ltd. Central Semiconductor, Corp. Vishay Intertechnology, Inc.

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