| PART |
Description |
Maker |
| 2SB601 2SB601-Z 2SB601-S 2SB601L 2SB601M 2SB601K |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| SDH03 |
PNP NPN Darlington H-bridge
PNP NPN Darlington Transistors (H-bridge)(PNP NPN达林顿晶体管(H桥）) 1.5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
| 2N6648 2N6649 2N6650 JAN2N6650 JANTX2N6650 JANTXV2 |
PNP Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
Microsemi Corporation
|
| 2N6052 2N6051 JANTXV2N6051 JANTXV2N6052 |
PNP Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| 2SA1714 2SA1714K 2SA1714L 2SA1714M |
PNP high-speed switching darlington transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING 进步党硅外延功率晶体管（达林顿连接笔记本高）高速开
|
NEC Corp.
NEC, Corp.
|
| FJPF9020 FJPF9020TU |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
PNP Epitaxial Darlington Transistor
NPN Epitaxial Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2N6286 2N6287 JANTXV2N6286 JANTXV2N6287 JANTX JANT |
PNP DARLINGTON POWER SILICON TRANSISTOR
PNP Darlington Transistor
|
MICROSEMI[Microsemi Corporation]
|
| FMMT734 FMMT734TA |
Discrete - Bipolar Transistors - Darlington Transistors
“SUPER SOT SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR
|
Diodes Incorporated
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| MPSW63-D MPSW63RLRA |
One Watt Darlington Transistors PNP Silicon
Small Signal Darlington PNP
|
ON Semiconductor
|
| KTB1234TNBSP KTB1234T |
Darlington Transistor
EPITAXIAL PLANAR PNP TRANSISTOR
From old datasheet system
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
