| PART |
Description |
Maker |
| PSB8510-1T PSB8510-XP PSB8510-6T PSB8510-6P |
Programmable Dialing Circuit 可编程拨号电
|
SIEMENS AG
|
| APL840N |
High quality voice synthesizer. 32 to 40 sec instant voice ROM.
|
Aplus Integrated Circuits
|
| MSM531655E-XXGS-K MSM531655E-XXTS-K MSM531655E |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM, 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM
|
OKI electronic componets
|
| MSM54V12222A |
From old datasheet system
262214 Words x 12 Bits FIELD MEMORY
262,214 WORDS X 12 BITS FIELD MEMORY
|
OKI[OKI electronic componets]
|
| W583S10 W5830 W583S99 W583M02 W583S15 W583S20 W583 |
HIGH FIDELITY Power Speech
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (60 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (50 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (30 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (99 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (80 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (40 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (25 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (20 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (15 sec)
Voice Synthesizer w/4 triggers, 5 STOPs, R0-R7, uC Interface, PWM/DAC (10 sec)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, uC Interface, PWM/DAC (2 min)
Voice Synthesizer w/8 triggers, 8 STOPs, R0-R7, µC Interface, PWM/DAC (2 min) (ROMless)
|
N.A.
WINBOND[Winbond]
Winbond Electronics Corp
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
2K-Bit Microwire Serial EEPROM
|
Samsung Semiconductor Co., Ltd.
Macronix International Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
Microchip Technology, Inc.
Rohm Co., Ltd.
Vicor, Corp.
CATALYST[Catalyst Semiconductor]
http://
|
| LC35W256EM LC35W256EM-10W LC35W256ET-10W LC35V256E |
256K (32K words x 8 bits) SRAM Control pins: NOT OE and NOT CE
256K (32K words x 8 bits) SRAM Control pins: OE and CE 256K2K字8位）的SRAM控制引脚：OE和行政长
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
|
