| PART |
Description |
Maker |
| 22N60 22N60G-T47-T 22N60L-T47-T 22N6011 |
22A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| WTN9435 |
Surface Mount P-Channel Enhancement Mode Power MOSF ET
|
Weitron Technology
|
| STP22NF03L07 STP22NF03L |
N-channel 30V - 0.0038Ω - 22A - TO-220 STripFET II Power MOSFET
N-channel 30V - 0.0038ヘ - 22A - TO-220 STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 22N65L-T47-T 22N6511 22N65G-T47-T |
22A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| HFA35HB60SCS |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
|
International Rectifier
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDMS357207 FDMS3572 |
N-Channel UltraFET Trench? MOSFET 80V, 22A, 16.5m?/a>
N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB22NE03L |
N-CHANNEL 30V - 0.034 OHM - 22A D2PAK STRIPFET POWER MOSFET
|
ST Microelectronics
|
| IRF530N FN4843 |
22A, 100V, 0.064 Ohm, N-Channel Power MOSFET
From old datasheet system
|
Intersil Corporation
|
| 2SK944 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 22A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 22A条（丁）|47VAR
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 22A I(D) | TO-247VAR
|
Electronic Theatre Controls, Inc.
|
| APT5024BVR |
POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
