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IS49NLC18160 - 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory

IS49NLC18160_4704653.PDF Datasheet


 Full text search : 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
 Product Description search : 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory


 Related Part Number
PART Description Maker
IS49NLC18160 IS49NLC36800 IS49NLC93200 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
Integrated Silicon Solution, Inc
K4C89183AF-GIFB K4C89083AF-ACF5 K4C89083AF-ACF6 K4 288Mb x18 Network-DRAM2 Specification
SAMSUNG[Samsung semiconductor]
CY7C43646-10AC CY7C43646-15AC CY7C43646-7AC CY7C43 16K X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP128
1K/4K/16K x36/x18/x2 Tri Bus FIFO
CYPRESS SEMICONDUCTOR CORP
K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C8909 288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
IBM0418A4ANLAB-4H IBM0436A4ANLAB-4H IBM0436A8ANLAB x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
Cypress Semiconductor, Corp.
HYM72V12C736BLS4-K HYM72V12C736BLS4-H HYM72V12C736 128Mx72|3.3V|K/H|x36|SDR SDRAM - Registered DIMM 1GB 128Mx72 | 3.3 | | x36 | SDRAM的特别提款权-注册1GB的内
OKI SEMICONDUCTOR CO., LTD.
Hynix Semiconductor
HYM71V32S755AT4M 32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB 32Mx72 | 3.3 | | x18 | SDRAM的特别提款权-注册256MB的内
Omron Electronics, LLC
HYM72V64736T8 HYM72V64736LT8-H 64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
Samsung Semiconductor Co., Ltd.
HYNIX SEMICONDUCTOR INC
IDT72V51236L6BB IDT72V51236L6BB8 IDT72V51256 IDT72 4Q x36 512K Multi-Queue, 3.3V
4Q x36 2M Multi-Queue, 3.3V
4Q x36 1M Multi-Queue, 3.3V
IDT
IDT72T51236 IDT72T51236L5BB IDT72T51236L5BB8 IDT72 4Q x36 512K Multi-Queue, 2.5V
4Q x36 1M Multi-Queue, 2.5V
4Q x36 2M Multi-Queue, 2.5V
IDT
 
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IS49NLC18160 eeprom IS49NLC18160 SePIC IS49NLC18160 heatsink IS49NLC18160 Supply IS49NLC18160 ram
 

 

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