| PART |
Description |
Maker |
| 0180800000 0205200000 0151400000 0194000000 044160 |
SAKG 28 III SAKG 32 II SAKG 32 III SAKG 32 II G SAKG 32 I SAKG 28 II G
SAKG 28 III SAKG 32 II SAKG 32 III SAKG 32 II G SAKG 32 I SAKG 28 II G
|
Weidmuller
|
| TSC251G2DXXX-24IA TSC251G2DXXX-24IB TSC251G2DXXX-L |
IC CYCLONE III FPGA 80K 484 FBGA
IC CYCLONE III FPGA 80K 780FBGA
IC CYCLONE III FPGA 5K 144 EQFP
IC CYCLONE III FPGA 5K 256 UBGA
IC CYCLONE III FPGA 5K 256-UBGA
IC CYCLONE III FPGA 5K 256 FBGA
IC CYCLONE III FPGA 55K 484 UBGA
8/16-bit Microcontroller with Serial Communication Interfaces 16位产品微控制器的串行通信接口
|
Atmel, Corp.
|
| C527RT200-0312 C527RT200-S0300 C527RT200-0305 C527 |
Reduced Forward Voltage 3.0 V Typical at 5 mA
Gen III LEDs
RazerThin Gen III LEDs
|
Cree, Inc
Marktech Corporate
|
| LXHL-LW3C LXHL-FB3C LXHL-FM3C LXHL-FW3C LXHL-LB3C |
(LXHL-xxxx) Luxeon III Star
Luxeon III Star Luxeon III的星
2mm TERMINAL STRIP
|
luxeon
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| ICS9248-131 ICS9248YF-131-T ICS9248YF-131LF-T AV92 |
Frequency Generator & Integrated Buffers for Celeron & PII/III??
Frequency Generator & Integrated Buffers for Celeron & PII/III⑩
100 MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO48 0.300 INCH, SSOP-48
Frequency Generator & Integrated Buffers for Celeron & PII/III 频率发生
Pleated Foil Flat Jacketed Cable, 93101/68 30 AWG, .025 (0.64) 频率发生
Frequency generator and integrated buffer for Celeron and PII/III
|
Integrated Circuit Syst...
ICST[Integrated Circuit Systems]
Integrated Device Technology, Inc.
|
| 71600-Y40LF 71600-060LF 71600-Y04LF 71600-Y06LF 71 |
QUICKIE III FEM 0.76,UM Au
QUICKIE III FEM 0.76um Au
|
FCI connector
|
| ADP3204 ADP3204JCP ADP3204JCP-REEL ADP3204JCP-REEL |
3-Phase IMVP-II and IMVP-III Core Controller for Mobile CPUs
Multi-phase IMVP-III Compliant Core Controller For Mobile Intel CPUs
3-Phase IMVP-II and IMVP-III Core Controller for Mobile CPUs SWITCHING CONTROLLER, QCC32
|
AD[Analog Devices]
Analog Devices, Inc.
|
| STP130NH02L B130NH02L P130NH02L STB130NH02L STB130 |
N-CHANNEL 24V - 0.0034 ?- 120A D2PAK/TO-220 STripFET III POWER MOSFET FOR DC-DC CONVERSION
N-CHANNEL 24V - 0.0034 з - 120A D?PAK/TO-220 STripFET⑩ III POWER MOSFET FOR DC-DC CONVERSION
|
STMICROELECTRONICS[STMicroelectronics]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
