| PART |
Description |
Maker |
| IRGPS4067DPBF |
Low VCE (on) Trench IGBT Technology
|
International Rectifier
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FGA65A3H |
VCE = 650 V, IC = 15 A Trench Field Stop IGBT
|
Sanken electric
|
| IXGM17N100A IXGH17N100 IXGH17N100A IXGM17N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXSM30N60A IXSH30N60 IXSH30N60A IXSM30N60 |
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
| GP2401ESM18 DYNEXSEMICONDUCTORLTD-GP2401ESM18 |
Hi-Reliability Single Switch Low VCE(SAT) IGBT Module 2400 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IXSH20N60U1 IXSH20N60AU1 |
Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| IXGT31N60 IXGH31N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
