| PART |
Description |
Maker |
| TLP371 |
Photocoupler (Consisting of GaALAs Infared emitting Diode and Photo-Transisor)(光电耦合器（含GaALAs红外线发光二极管和光电晶体管
|
Toshiba Corporation
|
| 2SC3585 2SC3585-T1B 2SC3585R43 2SC3585R45 2SC3585R |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| IRG4BC40F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) 绝缘栅双TRANSISOR（VCES和\u003d 600V电压的Vce（on）典\u003d 1.50V，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| BFG93A BFG93A_X BFG93 BFG93A/X BFG93X |
NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管（npn型第六代赫兹宽带晶体管）
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SD946 2SD946A 2SD946AQ 2SD946AR 2SD950 2SD951 2SD |
Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.
SI NPN EPITAXIAL PLANAR DARLINGTON 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126
|
PANASONIC[Panasonic Semiconductor]
Panasonic, Corp.
|
| MSD1328-ST1 MSD1328-ST1G MSD1328-RT1G MSD1328-RT10 |
NPN Low Voltage Output Amplifiers
General Purpose NPN Transistor
Small Signal Plastic NPN; Package: SC-59 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| BC550C BC550C_RR BC549 BC549C BC550 |
TRANSISTORSOT-54
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
NPN general purpose transistors 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
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PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PEMH15115 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
| UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠?
Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC]
NEC Corp.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
