| PART |
Description |
Maker |
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| 2SK3748 |
N CHANNEL MOS SILICON TRANSISTOR
High-Voltage High-Speed Switching Applications
High-Voltage, High-Speed Switching Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| SPT420 |
NPN HIGH VOLTAGE HIGH SPEED POWER TRANSISTOR 40 AMPS, 1000V
|
Solid States Devices, Inc
|
| KSC5302D KSC5302DTU |
NPN Silicon Transistor
High Voltage High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications
|
International Rectifier
|
| 2SC3783 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS) npn型三重扩散型（高速，高压开关，开关稳压器，高速DC - DC转换器应用）
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING SWITCHING REGULATOR HIGH SPEED DC-DC CONVERTER APPLICATIONS)
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING/ SWITCHING REGULATOR/ HIGH SPEED DC-DC CONVERTER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| ET191 |
TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING
|
FUJI[Fuji Electric]
|
| BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL54ASMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL54BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
