PART |
Description |
Maker |
5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
KDR393 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
KDR368E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
NSR0240P2T5G |
40V 0.2A low IR SOD-923 Schottky Diode 0.2 A, 40 V, SILICON, SIGNAL DIODE Schottky Barrier Diode
|
ON Semiconductor
|
10FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK(LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE)
|
TOSHIBA[Toshiba Semiconductor]
|
ASI5082-2794 5082-2794 |
SCHOTTKY LOW BARRIER DIODE SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
U10FWJ2C48M 10FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK (LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
NSR01L30NXT5G10 NSR01L30 |
30 V, 100 mA, Low IR Schottky Diode, DSN2 (0201) Schottky Barrier Diode
|
ON Semiconductor
|
RB521S30T1 RB521S30T1_D RB521S30T5 D RB521S30T1/D |
Low VF Small Signal Schottky Diode Schottky Barrier Diode
|
ONSEMI[ON Semiconductor]
|
PMEG4010ER10 PMEG4010ER |
1 A low V_F MEGA Schottky barrier rectifier 1 A, 40 V, SILICON, SIGNAL DIODE 1 A low VF MEGA Schottky barrier rectifier
|
NXP Semiconductors N.V.
|