| PART |
Description |
Maker |
| R6018ANX12 |
Nch 600V 18A Power MOSFET
|
Rohm
|
| IXTQ18N60P IXTV18N60P |
MOSFET N-CH 600V 18A TO-3P 18 A, 600 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
|
IXYS, Corp.
IXYS Corporation
|
| R6004KNJ |
Nch 600V 4A Power MOSFET
|
Rohm
|
| R6020FNJ |
Nch 600V 20A Power MOSFET
|
Rohm
|
| R6030ENZ1 |
Nch 600V 30A Power MOSFET
|
Rohm
|
| R6020ENZ1 |
Nch 600V 20A Power MOSFET
|
Rohm
|
| R6015ANX12 |
Nch 600V 15A Power MOSFET
|
Rohm
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m
N-Channel MOSFET 200V, 18A, 0.14楼?
N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
| IRG4PC30S IRG4PC30SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
| APT6035SVR APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
