PART |
Description |
Maker |
MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
MMBD7000LT1 ON2085 |
Dual Switching Diode DUAI SWITCHING DIODE From old datasheet system
|
MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
|
CPD74 |
Switching Diode Monolithic Isolated Quad Switching Diode Chip
|
Central Semiconductor Corp
|
BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes 0.4 A, 325 V, SILICON, SIGNAL DIODE HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
FE3B FE3D FE3C |
Diode Switching 100V 3A 2-Pin Case G-4 Diode Switching 200V 3A 2-Pin Case G-4 Diode Switching 150V 3A 2-Pin Case G-4
|
New Jersey Semiconductor
|