| PART |
Description |
Maker |
| KDS200 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| KDS184 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC(Korea Electronics)
|
| KDS196 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings
KEC(Korea Electronics)
|
| HN1D02FE |
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| TK50X15J1 |
Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS?
Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS楼虏)
|
Toshiba Semiconductor
|
| HN1D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| HN1D03FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS337 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
