| PART |
Description |
Maker |
| IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| IDT71V65802S150PFI IDT71V65602 IDT71V65602S100BG I |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
|
IDT[Integrated Device Technology]
|
| GS8161FZ18BGD-6.5 GS8161FZ18BGD-6.5I GS8161FZ32BGD |
18Mb Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18Mb Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 6.5 ns, PBGA165
18Mb Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 6.5 ns, PBGA165
18Mb Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA165
18Mb Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 5.5 ns, PBGA165
18Mb Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA165
18Mb Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 7.5 ns, PBGA165
18Mb Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8322Z72GC-225V GS8322Z36GB-166V GS8322Z36E-133V |
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7 ns, PBGA209
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 6.5 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 7 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 6.5 ns, PBGA209
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8.5 ns, PBGA209
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8 ns, PBGA209
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| AS7C33512NTD32_36A AS7C33512NTD32-36A.V2.8 AS7C335 |
3.3V 512K x 32/36 Pipelined SRAM with NTD 3.3流水线为512k × 32/36与新台币的SRAM
3.3V 512K x 32/36 Pipelined SRAM with NTD 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
3.3V 512K x 32/36 Pipelined SRAM with NTD 512K X 32 ZBT SRAM, 3.8 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| GVT71512ZC18-5I GVT71512ZC18-6I CY7C1356A-133ACI C |
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.2 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS880Z18BT-150IV GS880Z32BT-250V |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
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