| PART |
Description |
Maker |
| PTMA180402M11 |
Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz
|
Infineon Technologies AG
|
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
| HMC590LP5 |
high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| MGA-31816-BLKG |
0.1 W High Linearity Driver Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| CPH6021 |
PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| 15GN03CA12 15GN03CA-TB-E ENA1106A |
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| MGA-25203-BLKG |
5.1 - 5.9 GHz WiFi and WiMAX Power Amplifi er (3x3mm)
|
AVAGO TECHNOLOGIES LIMITED
|
| 2SK3557-7-TB-E 2SK3557-6-TB-E 2SK3557 |
N-Channel JFET, 15V, 10 to 32mA, 35mS, CP
High-Frequency Low-Noise Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| LZY-1 |
High Power Amplifier 5050W 20 to 512 MHz 20 MHz - 512 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
Mini-Circuits
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| ZHL-5W-1 |
50High Power 5 to 500 MHz
50Ω High Power 5 to 500 MHz
50ヘ High Power 5 to 500 MHz
|
Mini-Circuits
|
