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PHMB200BS12 - IGBT 200 A 1200 V

PHMB200BS12_4634005.PDF Datasheet


 Full text search : IGBT 200 A 1200 V
 Product Description search : IGBT 200 A 1200 V


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Dynex Semiconductor, Ltd.
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PHMB200BS12 IGBT 200 A 1200 V
Nihon Inter Electronics Corporation
APT15GT120BR APT15GT120BRG APT15GT120SRG Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT
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Microsemi, Corp.
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APT150GN120JDQ4 Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
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Microsemi, Corp.
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APT100GT120JR Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
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Microsemi, Corp.
Microsemi Corporation
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
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35A, 1200V, NPT Series N-Channel IGBT
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Fairchild Semiconductor, Corp.
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CM10MD1-24H CM10MD1-24 CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts 10 A, 1200 V, N-CHANNEL IGBT
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TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,10A I(C)
Powerex, Inc.
Powerex Inc
POWEREX[Powerex Power Semiconductors]
R6101020 R6101030 R6110420 R6100420 R6100425 R6100 General Purpose Rectifier (200-300 Amperes Average 1200 Volts) 通用整流器(200-300安培平均1200伏特
Powerex Power Semicondu...
Powerex, Inc.
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Powerex Power Semiconductor...
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
IXYS, Corp.
IXYS[IXYS Corporation]
APT75GN120J Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
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