| PART |
Description |
Maker |
| CM400DU-5F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD400 Amperes/250 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms
N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
| FDD6632 |
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET Trench Power MOSFET 30V/ 9A/ 90m
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mOhm
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9N322AD3ST |
POWER SUP SWITCHER 41W 5.1V MED 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022 з
N-Channel Logic Level UltraFET Trench MOSFET 30V 20A 0.022
N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022 ?
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| TP2640ND |
P-Channel Enhancement-Mode Vertical DMOS FETs 400 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex, Inc.
|
| FDA2712 |
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mOhms
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ
|
Fairchild Semiconductor
|
| FDT86244 |
150V N-Channel Power TrenchMOSFET
N-Channel Power Trench MOSFET
N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
| CECWP2G272M2-L22 CECWP2G392M3-L22 CECWP2G102M1-L22 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2700 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3900 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1000 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 330 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 5600 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1800 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3300 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 560 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 470 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1500 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 390 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 4700 uF, CHASSIS MOUNT
|
Nippon Chemi-con, Corp.
|
| GWM120-0075P3 |
Three phase full bridge with Trench MOSFETs in DCB isolated high current package 125 A, 75 V, 0.0045 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| FMP76-010T |
Trench P & N-Channel Power MOSFET Common Drain Topology
62 A, 100 V, 0.011 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PLASTIC, ISOPLUS, I4-PAK-5
|
IXYS Corporation
IXYS, Corp.
|
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