| PART |
Description |
Maker |
| MAGX-000035-05000P |
GaN Wideband 50 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solution...
|
| ECA-2AM100 ECJ-2VB1H103K 1812SMS-68NJLB ERJ-8GEYJ1 |
280W GaN Wideband Pulsed Power Amplifier
|
RF Micro Devices
|
| MAGX-000035-01000P-V2 MAGX-000035-01000P-15 |
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| MAGX-003135-SB5PPR MAGX-003135-120L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| GRM21BF51C106ZE15L GRM188R71H103KA01D 100A3R3BW150 |
225MHz TO 1215MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| RFHA1006 |
9W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| MAGX-001214-250L00 MAGX-001214-SB1PPR MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| PHI214-30EL PH1214-30EL |
Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2 - 1.4 GHz
High Speed Comparator; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to 70°C
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty . 1.2 - 1.4 GHz
Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
|
Tyco Electronics
|
