| PART |
Description |
Maker |
| STD10PF06 6553 |
N-CHANNEL POWER MOSFET
P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET
P - CHANNEL 60V - 0.18 - 10A TO-252 STripFET TM POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MJD2955-001 MJD3055T4 |
Power 10A 60V Discrete PNP
Power 10A 60V Discrete NPN
|
ON Semiconductor
|
| STD10PF06T4 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 10A条（丁）|52AA
|
STMicroelectronics N.V.
|
| FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package
N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m
N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| CPD34X CPD31X |
10A, 60V Schottky Rectifi er Die
|
Central Semiconductor Corp
Central Semiconductor C...
|
| HUFA75433S3ST HUFA75433S3S |
N-Channel UltraFET R MOSFETs 60V, 64A, 16mOhm
N-Channel UltraFET MOSFETs 60V/ 64A/ 16m
N-Channel UltraFET MOSFETs 60V, 64A, 16mз 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| 2SA1291 |
60V/10A High-Speed Switching Applications
|
Sanyo Semicon Device
|
| IRLZ14 IRLZ14L IRLZ14S IRLZ14SL |
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
|
IRF[International Rectifier]
|
| MPM3003 |
TRANSISTOR,MOSFET POWER MODULE,3-PH BRIDGE,60V V(BR)DSS,10A I(D)
From old datasheet system
|
Motorola Semiconductor Products Inc
|
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| FQB50N06L FQI50N06L FQB50N06 FQI50N06 FQI50N06LTU |
60V LOGIC N-Channel MOSFET 52.4 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
60V N-Channel Logic level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
