| PART |
Description |
Maker |
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX8346TB-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
| NX8341TJ-AZ NX8341UJ-AZ NX8341TB-AZ NX8341UB-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310纳米AlGaInAs多量子阱激光器的激光二极管0 Gb / s的应
|
California Eastern Laboratories, Inc.
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX5322EH NX5322EK NX5322 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5310EK-AZ NX5310 NX5310EH-AZ NX531006 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX7337BF-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
| NX7338BF-AA NX7338BF-AA-AZ |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Laboratories
|
