| PART |
Description |
Maker |
| RM400DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600HE-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DB-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| FZ750R65KE3 |
high insulated module
|
Infineon Technologies AG
|
| FZ750R65KE3T |
high insulated module
|
Infineon Technologies AG
|
| FM400TU-07A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PS11011 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| UFB200FA60P10 |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| UFB120FA20P10 |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
| VS-UFB130FA20 |
Insulated Ultrafast Rectifier Module, 130 A
|
Vishay Siliconix
|
