| PART |
Description |
Maker |
| RM600DY-66S |
HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module
|
Mitsubishi Electric Semiconductor
|
| FZ500R65KE3T |
high insulated module
|
Infineon Technologies AG
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FM400TU-3A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| QM75DY-24B |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| UFB80FA20 |
Insulated Ultrafast Rectifier Module, 80 A
|
Vishay Siliconix
|
| UFB130FA20 |
Insulated Ultrafast Rectifier Module, 130 A
|
Vishay Siliconix
|
| UFB200FA60P10 |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| UFB200FA40P UFB200FA40P10 |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| UFB120FA20P10 |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
