PART |
Description |
Maker |
CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18 Organization) From old datasheet system
|
Sony
|
MCM69R737AZP7 MCM69R737AZP6R MCM69R737AZP5R MCM69R |
From old datasheet system 4M Late Write LVTTL
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode) 16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode) Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
CXK77B3640GB |
4Mb Late Write HSTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入HSTL高速同步SRAM28K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)
|
Sony, Corp.
|
K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
HM62G36256ABP-30 HM62G36256ABP-33 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
MCM69R738CZP4.4R MCM69R820CZP4.4R MCM69R738CZP4R M |
4M Late Write 2.5 V I/O
|
Motorola, Inc
|
BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
MCM69R618 MCM69R536 |
1M Late Write HSTL From old datasheet system
|
Motorola
|
HM64YGB36100-15 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|