| PART |
Description |
Maker |
| KBU4D KBU4G KBU4M KBU4 KBU4A KBU4B KBU4J KBU4K |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
Silicon-Bridge Rectifiers
|
Diotec Semiconductor AG
Semtech Corporation
DIOTEC[Diotec Semiconductor]
|
| KBU4J KBU4D KBU4G KBU4B KBU4A KBU4M KBU4K |
4.0 Ampere Silicon Bridge Rectifiers
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| E-1048-S602DC24V4.0A E-1048-S602DC24V0.5A E-1048-S |
Optimum load protection. Available in current ratings of 0.5 A; 1 A; 2 A; 4 A. No derating required over entire temperature range!
|
ETAL Group
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington
Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3
INDUCTOR PWR UNSHIELD 470UH SMT
Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC
Max Power 43 W BTL ??4 ch Audio Power IC
Max Power 43 W BTL 】 4 ch Audio Power IC
IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC
Max Power 43 W BTL × 4 ch Audio Power IC
Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
| TA8260AH |
Max Power 40 W BTL 4CH Audio Power IC
Max Power 40 W BTL 】 4CH Audio Power IC
Max Power 40 W BTL x 4CH Audio Power IC
RAC15-TA(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Auxilary Voltage (Vdc): 12V; Features: Compact AC-DC Power
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
