| PART |
Description |
Maker |
| 2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION
|
TOSHIBA
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| 2SK184 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application
|
TOSHIBA
|
| 3SK291 |
Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|
| 2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA
|
| 3SK224 |
RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
| 2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK373 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications
|
TOSHIBA
|
