| PART |
Description |
Maker |
| SFH4289 |
GaAlAs-IR-Lumineszenzdiode in SMT-Geh漉se mit Linse GaAlAs Infrared Emitter in SMT Package with lens 发动器红外光在SMT Lumineszenzdiode，盖赫锓林斯本身麻省理工学院在SMT封装的GaAIAs红外发射器与镜头
|
Electronic Theatre Controls, Inc.
ETC
OSRAM GmbH
|
| SFH460 |
GaAlAs-Lumineszenzdiode
|
OSRAM GmbH
|
| 115280 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 115180 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 124141L |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 136274 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 136144 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 128244 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 193150 |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| Q65110A2464 Q65110A2975 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
OSRAM GmbH
|
