| PART |
Description |
Maker |
| MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
| MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CLF1G0035S-100 CLF1G0035-100 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| TGA2576-FL |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
