| PART |
Description |
Maker |
| MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
| MAGX-000912-125L00 MAGX-000912-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-000035-010000 MAGX-000035-01000S MAGX-000035- |
GaN on SiC HEMT Power Transistor Common-Source configuration
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-003135-SB1PPR AGX-003135-030L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
| CLF1G0060S-10 CLF1G0060-10 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
