| PART |
Description |
Maker |
| HMC818LP4E |
GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC818LP4E10 |
GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC617LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz
|
Hittite Microwave Corporation
|
| HMC564LC4 |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz
|
Hittite Microwave Corporation
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| AS193-73 |
PHEMT GaAs IC High Linearity 3 V Control SPDT Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路高线3 V控制0.1-2.5 GHz的SPDT开
PHEMT GaAs IC High Linearity 3 V Control SPDT Switch 0.1?.5 GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| AS195-306 |
PHEMT GaAs IC High Power SP5T Switch 0.1-2 GHz PHEMT的砷化镓集成电路大功率SP5T开0.1-2千兆
PHEMT GaAs IC High Power SP5T Switch 0.1? GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| AS166-300 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路大功率SP4T开0.1-2.5千兆
PHEMT GaAs IC High Power SP4T Switch 0.1.5 GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
