| PART |
Description |
Maker |
| BGA622 |
Silicon Germanium Wide Band Low Noise Amplifier
|
INFINEON[Infineon Technologies AG]
|
| BGA622L7 |
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
|
Infineon Technologies AG
|
| 2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
| EC3H03B |
VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications 甚高频到超高频宽带低噪声放大器和OSC应用
NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| UPC2708T-E3 UPC2708T UPC2711T-E3 UPC2711T |
3 GHz SILICON MMIC WIDE-BAND AMPLIFIER
|
NEC[NEC]
|
| BFP620FE7764 |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| 2SC5757 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Hitachi Semiconductor
|
| 2SC5757 2SC5757WE-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| UPC2711T UPC2711T-E3 |
2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPC2712T UPC2712T-E3 |
2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
NEC[NEC]
|
