| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP620F07 BFP620FH7764 BFP620F |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| SGA-9289 |
Silicon Germanium HBT Amplifier
|
Stanford Microdevices
|
| BFR740L3 |
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
| NESG3400M01 NESG3400M01-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| NESG340034 NESG340034-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BFP620 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体
CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting
24 V, PNP germanium transistor
20 V, PNP germanium transistor
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RTC6691 |
silicon-germanium (SiGe) power amplifier
|
RichWave
|
| BGT24MTR12 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies A...
|
