| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFR740L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
CEL[California Eastern Labs]
|
| SGA-9189 |
Silicon Germanium HBT Amplifier
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| SGA-7489 |
DC-3000 MHZ SILICON GERMANIUM
|
Electronic Theatre Controls, Inc.
ETC
Stanford Microdevices
|
| BFU730F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFP620 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| BFU768F-15 BFU768F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| UPC3227TB-E3 UPC3227TB-E3-A |
5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER
|
NEC
|
