PART |
Description |
Maker |
KST9013 |
Excellent hFE linearity Collector Current :IC=0.5A
|
TY Semiconductor Co., Ltd
|
2SB1169A |
High forward current transfer ratio hFE which has satisfactory linearity.
|
TY Semiconductor Co., Ltd
|
2SB930A |
High forward current transfer ratio hFE which has satisfactory linearity.
|
TY Semiconductor Co., Ltd
|
2SA1587 |
High voltage VCEO=-120V High hFE hFE=200 to 700 Small package
|
TY Semiconductor Co., Ltd
|
2SC4666 |
High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max)
|
TY Semiconductor Co., Ltd
|
CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ 2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q 2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
2SC3422 |
Good Linearity of hFE
|
Inchange Semiconductor ...
|
CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
CSC2001 CSA952 CSA952K CSA952L CSA952M CSA9529AW C |
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 180 hFE 0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 135 - 270 hFE 0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 200 - 400 hFE 0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 400 hFE PNP EPITAXIAL PLANAR SILICON TRANSISTOR 进步党平面外延硅晶体
|
Continental Device India Limited CDIL Continental Device India, Ltd.
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