| PART |
Description |
Maker |
| FGW40N120VD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW50N60HD |
Discrete IGBT (High-Speed V series) 600V / 50A
|
Fuji Electric
|
| FGW25N120VD |
Discrete IGBT (High-Speed V series) 1200V / 25A
|
Fuji Electric
|
| SGH23N60UFD SGH23N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
High Input Impedance
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
| BUP400D Q67040-A4423-A2 BUP400-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
From old datasheet system
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor G...
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| 2SJ226 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire
Very High-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
