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BM29F400B - 4 MEGABIT (512K x 8 ) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY(5V电源4M512K x 8 )扇区可擦除CMOS闪速存储器) 4兆位（为512k × 8伏扇区擦除的CMOS闪存V的电源的4分位（为512k × 8）扇区可擦除的CMOS闪速存储器 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY

BM29F400B_4583606.PDF Datasheet
 
Part No. BM29F400B BM29F400T 29F400T-12PC 29F400T-12PI 29F400T-90TC 29F400T-90TI 29F400B-12TC 29F400B-90PI 29F400T-12TI 29F400T-90PC 29F400B-90TC 29F400T-90PI 29F400B-12PI 29F400B-90TI 29F400B-12PC 29F400T-12TC 29F400B-12TI 29F400B-90PC
Description 4 MEGABIT (512K x 8 ) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY(5V电源4M512K x 8 )扇区可擦除CMOS闪速存储器) 4兆位（为512k × 8伏扇区擦除的CMOS闪存V的电源的4分位（为512k × 8）扇区可擦除的CMOS闪速存储器
4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
File Size 236.85K  /  38 Page  

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Winbond Electronics, Corp.
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 Full text search : 4 MEGABIT (512K x 8 ) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY(5V电源4M512K x 8 )扇区可擦除CMOS闪速存储器) 4兆位（为512k × 8伏扇区擦除的CMOS闪存V的电源的4分位（为512k × 8）扇区可擦除的CMOS闪速存储器 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
 Product Description search : 4 MEGABIT (512K x 8 ) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY(5V电源4M512K x 8 )扇区可擦除CMOS闪速存储器) 4兆位（为512k × 8伏扇区擦除的CMOS闪存V的电源的4分位（为512k × 8）扇区可擦除的CMOS闪速存储器 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY

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