| PART |
Description |
Maker |
| K4H510438B-ZC/LB0 K4H511638B-ZC/LB0 K4H510838B-ZC/ |
512Mb B-die DDR SDRAM Specification 512MB的乙芯片DDR SDRAM内存规格
COVER, SIDE ENTRY, 20WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:20; Ways, No. of:20 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格
CONN MEMORY CARD HDR CF NORMAL 512MB的乙芯片DDR SDRAM内存规格
CN 68PIN (PC CARD) 512MB的乙芯片DDR SDRAM内存规格
COVER, SIDE ENTRY, 56WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:56; Ways, No. of:56 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格
COVER, TOP ENTRY, 90WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:90; Ways, No. of:90 RoHS Compliant: Yes
DIODE ZENER SINGLE 500mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 150mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-523 3K/REEL
DIODE ZENER SINGLE 200mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-323 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IDT49C460EJB IDT49C460DFF IDT49C460AG IDT49C460AJ |
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:90; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 32位CMOS错误检测和纠正装置
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT 49C SERIES, 32-BIT ERROR DETECT AND CORRECT CKT, CQFP68
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT 49C SERIES, 32-BIT ERROR DETECT AND CORRECT CKT, CPGA68
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT 49C SERIES, 32-BIT ERROR DETECT AND CORRECT CKT, PQCC68
|
Integrated Device Technology, Inc.
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| ISL576104 ISL5761_2IA ISL5761_2IAZ ISL5761_2IB ISL |
10-bit, 3.3V, 130 MSPS, high speed D/A converter. Clock speed 130 MHz.
10-bit, 3.3V, 130/210 MSPS, High Speed D/A Converter
|
Intersil Corporation
|
| RF1K49154 FN4143 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A 60V 0.130 Ohm Dual N-Channel LittleFET Power MOSFET
From old datasheet system
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RF1K49221 FN4314 |
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETPower MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET?Power MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET
2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| STW43NM60N |
N-channel 600 V, 0.075 Ω, 35 A MDmesh?/a> II Power MOSFET TO-247
|
STMicroelectronics
|
| SFF250M-1 |
30 AMP 200 VOLTS 00.075 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
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