| PART |
Description |
Maker |
| K4H510438B-ZC/LB0 K4H511638B-ZC/LB0 K4H510838B-ZC/ |
512Mb B-die DDR SDRAM Specification 512MB的乙芯片DDR SDRAM内存规格
COVER, SIDE ENTRY, 20WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:20; Ways, No. of:20 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格
CONN MEMORY CARD HDR CF NORMAL 512MB的乙芯片DDR SDRAM内存规格
CN 68PIN (PC CARD) 512MB的乙芯片DDR SDRAM内存规格
COVER, SIDE ENTRY, 56WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:56; Ways, No. of:56 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格
COVER, TOP ENTRY, 90WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:90; Ways, No. of:90 RoHS Compliant: Yes
DIODE ZENER SINGLE 500mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 150mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-523 3K/REEL
DIODE ZENER SINGLE 200mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-323 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MAX251 MAX251CPD MAX251CSD MAX251EJD MAX251EPD MAX |
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:90; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
5V High-Speed RS-232 Transceivers with 0.1uF Capacitors
5V Powered Isolated RS-232 Drivers/Receivers
From old datasheet system
5V, Isolated, RS-232 Driver Receiver
Hex schmitt-trigger inverters 14-SO 0 to 70
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| ISL58292IN ISL5829EVAL1 ISL5829IN |
Dual 12-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter
Dual 12-bit/ 3.3V/ 130/210MSPS/ CommLink TM High Speed D/A Converter
210MHz; 3.6V; 24mA; dual 12-bit, 3.3V, 130/210 MSPS, commLink high speed D/A converter. For quadrature transmit with IF range 0-80MHz, medical/test instrumentation and equipment, wireless communication systems, BWA infrastructure
|
http://
Intersil Corporation
|
| ISL59612IA ISL59612IB ISL5961IB ISL5961IA ISL5961 |
14-Bit, 3.3V, 130/210MSPS, CommLinkTM High Speed D/A Converter PARALLEL, WORD INPUT LOADING, 0.035 us SETTLING TIME, 14-BIT DAC, PDSO28
CONNECTOR ACCESSORY
14-Bit 3.3V 130/210MSPS CommLinkTM High Speed D/A Converter
14-Bit/ 3.3V/ 130/210MSPS/ CommLinkTM High Speed D/A Converter
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SFF250M-1 |
30 AMP 200 VOLTS 00.075 ohm N-Channel Power MOSFET 30 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| BSS84LT1 BSS84LT1G BSS84L |
Power MOSFET 130 mAmps, 50 Volts
Power MOSFET 130 mA, 50 V
|
ONSEMI[ON Semiconductor]
|
| PHA3135-130M |
Computers; Leaded Process Compatible:Yes RoHS Compliant: Yes RadarPulsedPowerModule15，，13014500msPulse 3.1 - 3.5吉赫
RadarPulsedPowerModule/ 115/ 130/145W/100msPulse 3.1 - 3.5 GHz
RadarPulsedPowerModule 115 130145W100msPulse 3.1 - 3.5 GHz
RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz
|
MACOM[Tyco Electronics]
|
| ISL5629 ISL5629/2IN |
Dual 8-bit, 3.3V, 130/210 MSPS, CommLink™ High Speed D/A Converter; Temperature Range: -40°C to 85°C; Package: 48-MQFP DUAL, PARALLEL, 8 BITS INPUT LOADING, 8-BIT DAC, PQFP48
D/A Converter, Dual, 8 Bit, 130/210MSPS, High Speed, 3.3V
|
Intersil, Corp.
|
| SFF250M-1 |
30 AMP 200 VOLTS 00.075 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
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