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NN5116165ALRR-60 - x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM

NN5116165ALRR-60_4551010.PDF Datasheet


 Full text search : x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
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NN51V4265AJ-40 NN51V4265AJ-45 NN51V4265ALTT-45 x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
TE Connectivity, Ltd.
HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 x16 EDO Page Mode DRAM

AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
Alliance Semiconductor
IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 x8 EDO Page Mode DRAM
2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
IBM Microeletronics
International Business Machines, Corp.
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY 4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY 1M x 4 Bit EDO DRAM 3.3 V 50 ns
1M x 4 Bit EDO DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
1M x 4 Bit EDO DRAM 3.3 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
UPD4217805G5-60-7JD UPD4217805G5-50-7JD UPD4217805 x8 EDO Page Mode DRAM
16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO 16位动态随机存储器2m-word8位,江户
NEC TOKIN America Inc.
NEC TOKIN, Corp.
MSC23CV16458D-XXBS4 MSC23CV16458D MSC23CV16458D-60 1M X 64 EDO DRAM MODULE, 60 ns, DMA144 SODIMM-144
From old datasheet system
1,048,576-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
Oki Electric Industry Co., Ltd.
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存)
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
Integrated Silicon Solution, Inc.
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
 
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