| PART |
Description |
Maker |
| IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through
From old datasheet system
8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| RM87 RM84 RM85 |
Miniature Electromagnetic Relays
|
Altech corporation
|
| ISOEM-AX-PX-OX |
Electromagnetic Isolation Transmitter
|
YUAN
|
| 17570 17570-5 |
HTSNK. A X-FLOW. .911 LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
|
| EA100 |
electromagnetic radio wave absorbers
|
List of Unclassifed Manufacturers
|
| WST-1201BX WST-1201BX-16 |
THIS SPECIFICATION APPLIES TO THE ELECTROMAGNETIC BUZZER
|
Soberton Inc.
|
| 140-90001 |
RIXSON FIREMARK ELECTROMAGNETIC DOOR RELEASE
|
Gamewell-FCI by Honeywell
|
| STK397-010 |
Electromagnetic Focus Output 1-Channel Amplifier(Ic max=2A)
|
Sanyo Semicon Device
|
| BAT18-05 BAT18 BAT18-04 |
CUSTOM SENSOR, ELECTROMAGNETIC
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| IDT71T75902 71T75702_DS_59004 IDT71T75902S80PF IDT |
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM
From old datasheet system
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs
|
IDT
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
