| PART |
Description |
Maker |
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| DS52-0002 DS52-0002-TR DS52-0002-RTR |
Low Cost Two-Way SMT Power Divider 1920- 2170 MHz
Low Cost Two-Way SMT Power Divider 1920- 2170 MHz 低成本双向SMT功率分频920170年兆
1920-2170 MHz, Low cost two-way SMT power divider
|
Bel Fuse, Inc.
MACOM[Tyco Electronics]
MA-Com
|
| MHV5IC2215NR2 |
2170 MHz, 23 dBm, 28 V Single N鈥揅DMA
|
MOTOROLA
|
| MRF21120R6 |
2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA212401E PTFA212401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFB211803EL PTFB211803FL |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| BLD6G22LS-50112 BLD6G22L-50112 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors N.V.
|
