Part Number Hot Search : 
B1306 MC680 01504 F473K 227M0 MEAPGS BRA32C3 DAP222T1
Product Description
Full Text Search

ATC100B330JT500XT - RF Power Field Effect Transistor

ATC100B330JT500XT_4528409.PDF Datasheet

 
Part No. ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS ATC100B180JT500XT T491X226K035AT MRF6VP11KHR610 1812SMS-82NJLC MCCFR0W4J0102A50 1812SMS-47NJLC ATC100B750JT500XT
Description RF Power Field Effect Transistor

File Size 740.24K  /  11 Page  

Maker


Freescale Semiconductor, Inc



Homepage http://www.freescale.com
Download [ ]
[ ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS ATC100B180JT500XT T491X226K035AT MRF6VP11KHR610 18 Datasheet PDF Downlaod from Datasheet.HK ]
[ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS ATC100B180JT500XT T491X226K035AT MRF6VP11KHR610 18 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for ATC100B330JT500XT ]

[ Price & Availability of ATC100B330JT500XT by FindChips.com ]

 Full text search : RF Power Field Effect Transistor


 Related Part Number
PART Description Maker
IRF540_D ON0285 IRF540/D IRF540-D IRF540 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
SSM5P05FU Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
General Electric Solid State
GE Solid State
PTF181301 PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
INFINEON[Infineon Technologies AG]
MTM40N20 Power Field Effect Transistor
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
MRF8S19140HR3 MRF8S19140HSR3 RF Power Field Effect Transistors
Freescale Semiconductor
MRF6522-70 MRF6522-70R306 MRF6522-70R3 RF Power Field Effect Transistor
http://
Freescale Semiconductor, Inc
MRF8S8260HR3 MRF8S8260HSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MTM15N20 MOTOROLAINC-MTM15N20 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
 
 Related keyword From Full Text Search System
ATC100B330JT500XT interrupt ATC100B330JT500XT Mode ATC100B330JT500XT differential ATC100B330JT500XT 参数网 ATC100B330JT500XT search
ATC100B330JT500XT Rectifier ATC100B330JT500XT vdd ATC100B330JT500XT Mixed ATC100B330JT500XT Module ATC100B330JT500XT 资料
 

 

Price & Availability of ATC100B330JT500XT

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.60053992271423