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MBM29PDS322BE10PBT - 32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63 32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作 NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63 Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85

MBM29PDS322BE10PBT_4500187.PDF Datasheet
 
Part No. MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11PBT MBM29PDS322TE11PBT MBM29PDS322TE10 MBM29PDS322TE10PBT
Description 32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作
NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
File Size 238.87K  /  66 Page  

Maker

Fujitsu Component Limited.
Fujitsu, Ltd.
FUJITSU LTD

Homepage http://edevice.fujitsu.com/fmd/en/index.html
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 Full text search : 32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63 32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作 NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63 Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
 Product Description search : 32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63 32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作 NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63 Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85

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